Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Author

Kino, Shota ; Heya, Akira ; Nonomura, Yuki ; Matsuo, Naoto ; Kanda, Kazuhiro ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu

Author_Institution

Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

223

Lastpage

226

Abstract

We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

Keywords

X-ray effects; amorphous semiconductors; core levels; crystallisation; elemental semiconductors; germanium; plasma CVD; semiconductor growth; semiconductor thin films; silicon; synchrotron radiation; valence bands; Ge; Si; atomic migration; core level; current 25 mA to 220 mA; electron excitation; low-temperature crystallization; storage ring current; synchrotron radiation soft X-ray irradiation; temperature 500 degC to 390 degC; temperature 680 degC to 580 degC; valence band; Annealing; Crystallization; Films; Photonics; Radiation effects; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294889