DocumentCode
568022
Title
Gate-tunable control in graphene semiconductive channel
Author
Tsukagoshi, K. ; Miyazaki, H. ; Li, S.-L. ; Kanda, A. ; Nakaharai, S.
Author_Institution
WPI-MANA, NIMS, Tsukuba, Japan
fYear
2012
fDate
4-6 July 2012
Firstpage
305
Lastpage
308
Abstract
We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.
Keywords
elemental semiconductors; graphene; logic gates; self-assembly; wide band gap semiconductors; C; band gap enhancement; bilayer graphene transistors; dual-gate sandwiching; electric field; gate-tunable control; graphene electronics; graphene semiconductive channel; logic gate operation; self-assembled gate insulator; wide band gap; Electric fields; FETs; Logic gates; Photonic band gap; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-4673-0399-6
Type
conf
Filename
6294912
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