Title :
Reliability of single-grain silicon TFTs fabricated from spin-coated liquid-silicon
Author :
Zhang, Jin ; Ishihara, Ryoichi ; Takagishi, Hideyuki ; Kawajiri, Ryo ; Shimoda, Tatsuya ; Beenakker, C.I.M.
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands
Abstract :
Liquid silicon, a solution of hydrogenated polysilane, is attractive for fabrication of high-speed flexible electronics by printing of Si. We have formed location-controlled silicon grains as large as 3.5 μm by spin-coating of the liquid-Si and excimer laser crystallization with a long pulse duration (250ns). Single-grain silicon TFTs are fabricated on the grains and the carrier mobilities are 423 cm2/Vs for electrons and 118 cm2/Vs for holes. The hysteresis behavior and the transistor characteristics after gate and drain stresses were studied systematically as well.
Keywords :
carrier mobility; crystallisation; elemental semiconductors; excimer lasers; flexible electronics; hysteresis; liquid films; liquid semiconductors; semiconductor thin films; silicon; spin coating; thin film transistors; Si; carrier mobility; drain stress; excimer laser crystallization; gate stress; high-speed flexible electronics; hydrogenated polysilane; hysteresis behavior; location-controlled silicon grains; reliability; single-grain silicon TFT; size 3.5 mum; spin-coated liquid-silicon; transistor characteristics; Charge carrier processes; Films; Logic gates; MOS devices; Silicon; Stress; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
