Silicon TFTs and circuits on glass and on plastics

Author

Mohammed-Brahim, T. ; Janfaoui, S. ; Kandoussi, K. ; Simon, C. ; Coulon, N.

Author_Institution

IETR, D.M.M., Univ. de Rennes I, Rennes, France

fYear

2012

fDate

4-6 July 2012

Firstpage

313

Lastpage

316

Abstract

Silicon technology leading to reliable CMOS electronics on any substrate supporting a maximum temperature of 180°C is presented. The technology is based on as-deposited microcrystalline silicon deposited in standard PECVD reactor using usual silane and hydrogen gases and adding only argon to improve the crystalline fraction. Very high uniformity on the size of our substrate (5cm×5cm) is demonstrated. Reproducibility is obtained even if the flows of the gases are slightly varied. New silicon technology producing circuits that are able to go with any physical function is then demonstrated.

Keywords

elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; thin film transistors; CMOS electronics; PECVD reactor; Si; SiO₂; circuits; crystalline fraction; gas flows; glass; hydrogen gas; maximum temperature; microcrystalline silicon; physical function; plastics; reproducibility; silane gas; silicon TFT; silicon technology; substrate size; Argon; CMOS integrated circuits; Films; Insulators; Logic gates; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294914