Effect of intrinsic capacitances and time necessary for channel creation in silicon-based thin-film transistors

We present the study of the dynamic response of silicon-based thin-film transistors under the voltage change, focusing on the time necessary to form the channel. Every detail of the current response-time curve is discussed by analyzing the intrinsic capacitances of thin-film transistors in on and off state and in linear and saturation mode. The method used in this work allows the visualization of the beginning of the channel conduction and the end of the channel formation process. We show the dependence of the channel creation time on geometrical parameters, applied voltage, material and structure. For this purpose, we use experimental results of the dynamic measurement and 2D finite elements simulation.