DocumentCode
568606
Title
Utilizing PCM for Energy Optimization in Embedded Systems
Author
Shao, Zili ; Liu, Yongpan ; Chen, Yiran ; Li, Tao
Author_Institution
Dept. of Comput., Hong Kong Polytech. Univ., Hong Kong, China
fYear
2012
fDate
19-21 Aug. 2012
Firstpage
398
Lastpage
403
Abstract
Due to its high density, bit alterability, and low standby power, phase change memory (PCM) is considered as a promising DRAM alternative. In embedded systems, especially battery-driven mobile devices, energy is one of the most important performance metrics. Therefore, it becomes an interesting problem of utilizing PCM for energy optimization in embedded systems. While recently there have been extensive studies on PCM, energy optimization with PCM in embedded systems has not been fully addressed. In this paper, we present a hybrid memory system architecture in which PCM is used to replace DRAM as much as possible so the system energy can be reduced by utilizing the lower standby power of PCM. However, to achieve this, system-level software optimization techniques are required in order to solve problems caused by the three disadvantages of PCM: namely, long write latency, large write energy and limited write endurance. We propose an optimal static data allocation scheme to solve a simplified problem, and discuss how to extend this to solve more complex problems. We also present emerging research issues in compiler optimization, real-time task scheduling and operating systems when utilizing PCM for energy optimization in embedded systems.
Keywords
DRAM chips; embedded systems; operating system kernels; phase change memories; program compilers; DRAM chips; PCM; battery driven mobile devices; compiler optimization; embedded systems; energy optimization; hybrid memory system architecture; long write latency; operating systems; optimal static data allocation scheme; phase change memory; real time task scheduling; standby power; system level software optimization; write endurance; write energy; Computer architecture; Embedded systems; Nonvolatile memory; Optimization; Phase change materials; Random access memory; Resource management; Embedded Systems; Energy; PCM (Phase Change Memory);
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
Conference_Location
Amherst, MA
ISSN
2159-3469
Print_ISBN
978-1-4673-2234-8
Type
conf
DOI
10.1109/ISVLSI.2012.81
Filename
6296506
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