Title :
Control of crystallographic texture and surface morphology of Pt/Tio2 templates for enhanced PZT thin film texture
Author :
Fox, Austin J. ; Drawl, Bill ; Fox, Glen R. ; Gibbons, Brady J. ; Trolier-McKinstry, Susan
Author_Institution :
Mater. Sci., Sch. of Mech., Ind., & Manuf. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
Optimized processing conditions for Pt/TiO2/SiO2/Si templating electrodes were investigated. These electrodes are used to obtain [111] textured thin film lead zirconate titanate (Pb[ZrxTi1-x]O3 0 ≤ x ≤ 1) (PZT). Titanium deposited by dc magnetron sputtering yields [0001] texture on a thermally oxidized Si wafer. It was found that by optimizing deposition time, pressure, power, and the chamber pre-conditioning, the Ti texture could be maximized while maintaining low surface roughness. When oxidized, titanium yields [100]-oriented rutile. This seed layer has as low as a 4.6% lattice mismatch with [111] Pt; thus, it is possible to achieve strongly oriented [111] Pt. The quality of the orientation and surface roughness of the TiO2 and the Ti directly affect the achievable Pt texture and surface morphology. A transition between optimal crystallographic texture and the smoothest templating surface occurs at approximately 30 nm of original Ti thickness (45 nm TiO2). This corresponds to 0.5 nm (2 nm for TiO2) rms roughness as determined by atomic force microscopy and a full-width at half-maximum (FWHM) of the rocking curve 0002 (200) peak of 5.5/spl degrees/ (3.1/spl degrees/ for TiO2). A Pb[Zr0.52Ti0.48]O3 layer was deposited and shown to template from the textured Pt electrode, with a maximum [111] Lotgering factor of 87% and a minimum 111 FWHM of 2.4/spl degrees/ at approximately 30 nm of original Ti.
Keywords :
atomic force microscopy; crystallography; lead compounds; piezoelectric thin films; platinum; sputter deposition; surface morphology; surface roughness; surface texture; titanium compounds; FWHM; PZT; PZT thin film texture; [0001] texture; [111] Lotgering factor; [111] textured thin film; atomic force microscopy; crystallographic texture; dc magnetron sputtering; deposition time; full-width at half-maximum; rms roughness; rocking curve 0002 peak; smoothest templating surface; surface morphology; surface roughness; thermally oxidized Si wafer; Films; Rough surfaces; Substrates; Surface morphology; Surface roughness; Surface texture; Surface treatment;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2014.006671