Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields

Author

Genenko, Y.A. ; Hirsch, O. ; Erhart, P.

Author_Institution

Inst. fur Materialwissenschaft, Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

4

Abstract

Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.

Keywords

barium compounds; dielectric polarisation; electric domains; ferroelectric ceramics; ferroelectric materials; grain boundaries; space charge; BaTiO₃; asymmetric screening; asymmetric space charge; electric depolarization fields; electronic band bending; ferroelectric grain boundary; field screening; grain surface; intrinsic defects; potential barrier; semiconductor model; stripe domain structure; Dielectrics; Electric fields; Electric potential; Finite element methods; Grain boundaries; Space charge; band bending; defects; depolarization field; ferroelectric grain; potential barrier at the grain boundary; semiconductor model; space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp

Conference_Location

Aveiro

Print_ISBN

978-1-4673-2668-1

Type

conf

DOI

10.1109/ISAF.2012.6297727

Filename

6297727