Pizeoelectric epitaxial sol-gel Pb(Zr0.52Ti0.48)O3 film on Si(001)

Epitaxial Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO₃ (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO₂, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO₃ (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650°C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.