• DocumentCode
    56915
  • Title

    RC Model for Frequency Dependence of Split C\\hbox {--}V Measurements on Bare SOI Wafers

  • Author

    Diab, A. ; Ionica, Irina ; Ghibaudo, Gerard ; Cristoloveanu, S.

  • Author_Institution
    Institut de Microélectronique, Electromagnétisme et Photonique and LAboratoire d´Hyperfréquences et de Caractérisation, Institut Polytechnique de Grenoble, Micro and Nanotechnology Innovation Centre, Grenoble, France
  • Volume
    34
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    792
  • Lastpage
    794
  • Abstract
    The feasibility of split C\\hbox {--}V measurements for direct evaluation of carrier mobility in as-fabricated silicon-on-insulator wafers has been demonstrated. Here, we complete this letter by modeling the frequency dependence of capacitance curves. The peculiarity of the pseudo-MOSFET ( \\Psi -MOSFET) configuration with respect to standard MOSFET comes from the possible distribution of mobile carriers beyond the source and drain contacts. This implies a variation in charge spreading and capacitance with frequency that we address with an RC low-pass filter model. Experimental C\\hbox {--}V measurements with one and two probes were used for validation of the proposed model.
  • Keywords
    $RC$ model; frequency dependence; pseudo-MOSFET; silicon-on-insulator (SOI); split $Chbox{--}V$;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2257663
  • Filename
    6515299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=56915