Title :
Sensitivities of Bilayer Graphene FET Performance to Bipolar Characteristics
Author :
Jing, Li ; Wensheng, Wei ; Yuxing, Dai
Author_Institution :
Coll. of Phys. & Electron. Inf. Eng., Wenzhou Univ., Wenzhou, China
fDate :
July 31 2012-Aug. 2 2012
Abstract :
A model of top gate bilayer graphene field effect transistor (FET) was designed in this paper, and the properties of the transistor were analyzed via MATLAB numerical simulation. The results show that characteristics of bipolar carriers in graphene were reflected in the transistor performances. The channel carrier type, concentration, and drain current change with the top gate Dirac point voltage (VTG-D). The device trans conductance and characteristic frequency increase with decreasing the absolute value of VTG-D. The characteristic frequency can reach up to 210 GHz when the voltage between drain and source electrodes and the absolute value of VTG-D equal to 0.7 V and 0.5 V, respectively, which indicates that the bilayer graphene FET would be suitable for high frequency applications, and also reveals the designed device as potential sensor in the future.
Keywords :
electrodes; graphene; millimetre wave bipolar transistors; millimetre wave field effect transistors; numerical analysis; semiconductor device models; C; Matlab numerical simulation; VTG-D; bilayer graphene FET performance sensitivity; bipolar carrier characteristics; bipolar characteristics; channel carrier type; characteristic frequency; device transconductance; drain current; drain electrodes; sensor; source electrodes; top gate Dirac point voltage; top gate bilayer graphene field effect transistor; voltage 0.5 V; voltage 0.7 V; Charge carrier processes; FETs; Logic gates; Sensitivity; Transconductance; Bilayer Graphene; Bipolar characteristics; Dirac Point Voltage; Field Effect Transistor;
Conference_Titel :
Digital Manufacturing and Automation (ICDMA), 2012 Third International Conference on
Conference_Location :
GuiLin
Print_ISBN :
978-1-4673-2217-1
DOI :
10.1109/ICDMA.2012.180
