Title :
Analytical Threshold Voltage Model of Junctionless Double-Gate MOSFETs With Localized Charges
Author :
Jong-Ho Woo ; Ji-Min Choi ; Yang-Kyu Choi
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
An analytical threshold voltage model for a junctionless double-gate MOSFET with localized charges is developed. The model is derived based on 2-D Poisson´s equation with parabolic potential approximation. The proposed model is verified by device simulation results. Threshold voltage dependencies on various device parameters are also analyzed. The proposed model can be used to estimate the threshold voltage degradation as caused by hot carrier effects and to provide a guideline for the optimization of junctionless transistors.
Keywords :
MOSFET; Poisson equation; approximation theory; hot carriers; optimisation; semiconductor device models; 2D Poisson´s equation; analytical threshold voltage model; device parameters; device simulation; hot carrier effects; junctionless double-gate MOSFET; junctionless transistors; localized charges; optimization; parabolic potential approximation; threshold voltage degradation; threshold voltage dependency; Analytical models; Electric potential; Equations; MOSFET; Mathematical model; Semiconductor device modeling; Threshold voltage; 2-D Poisson´s equation; hotcarrier effects (HCEs); junctionless double-gate (JLDG) MOSFETs; localized charge; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2273223
