DocumentCode :
569820
Title :
An Improved Design of Key Analog Circuits in CMOS Image Sensor
Author :
Wen Wei Lin ; Zhong Zhuang Fang ; Ke Jie Chi
Author_Institution :
Sch. of Photoelectronic Inf. & Commun. Eng., Beijing Inf. Sci. & Technol. Univ., Beijing, China
fYear :
2012
fDate :
17-19 Aug. 2012
Firstpage :
951
Lastpage :
954
Abstract :
CMOS image sensors transmit images by photoelectric conversion and consist of several key analog circuits. We discuss the structure and the overall operating principles of typical CMOS image sensor, and conduct analysis of the key analog circuits function. We carry out the discussion of the theoretical and mathematical principles of those circuits and then we design certain improved key analog circuits on the base of the SMIC 0.5μm 2P3M CMOS craft, such as the pixel cell array circuit, the correlated sampling circuit as well as the Bandgap reference circuit. Our improved designs have improved characteristics such as high output swings, high temperature stability and relatively low room occupation.
Keywords :
CMOS image sensors; analogue circuits; integrated circuit design; photoelectric devices; CMOS craft; CMOS image sensors; SMIC; key analog circuits; photoelectric conversion; pixel cell array circuit; Analog circuits; Arrays; CMOS image sensors; Noise; Photodiodes; Photonic band gap; Power supplies; CMOS; correlated double sampling; pixel; reference voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational and Information Sciences (ICCIS), 2012 Fourth International Conference on
Conference_Location :
Chongqing
Print_ISBN :
978-1-4673-2406-9
Type :
conf
DOI :
10.1109/ICCIS.2012.69
Filename :
6301441
Link To Document :
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