Deposition by means of pulsed electron beam ablation

A new deposition technique by means of ablation for producing high quality thin films of dielectric inorganic- and organic compounds and alloys is presented in this paper. During 60 ns directed energy is driven to the target by means of a space charge neutralized, magnetically self pinched electron beam. The beam energy is 15 ke V, the current 1.5 kA and the current density is up to 10⁵ A/cm². The electron beam is generated in a low pressure gas discharge system, which is simple, reliable and has an efficiency of 30 % of converting electric energy in deposited energy at the target. The advantages in comparison with UV-laser ablation are efficiency, an only 5% deviation of stoichiometry of the film, large area deposition, simple handling, no dangerous gases and 20 time lower costs. The process of electron beam ablation with respect to range, heath conduction during deposition are discussed shortly.