Title :
GaN power electronics for automotive application
Author :
Boutros, Karim S. ; Chu, Rongming ; Hughes, Brian
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
Gallium Nitride power devices are poised to replace silicon-based MOSFETs and IGBTs in automotive power switching applications. With its projected 100× performance advantage over silicon, GaN is a game changing technology for power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the remaining challenges facing the technology.
Keywords :
III-V semiconductors; automotive electronics; gallium compounds; power electronics; power semiconductor switches; wide band gap semiconductors; GaN; IGBT; automotive electronics; automotive power switching applications; gallium nitride power devices; power circuits; power electronics; silicon-based MOSFET; Automotive engineering; Gallium nitride; Insulated gate bipolar transistors; Logic gates; Silicon; Switches; Vehicles; GaN; GaN-on-Si; Gallium Nitride; HFET; automotive applications; hetero-structure field-effect-transistor; power switch;
Conference_Titel :
Energytech, 2012 IEEE
Conference_Location :
Cleveland, OH
Print_ISBN :
978-1-4673-1836-5
Electronic_ISBN :
978-1-4673-1834-1
DOI :
10.1109/EnergyTech.2012.6304646
