DocumentCode
571144
Title
GaN power electronics for automotive application
Author
Boutros, Karim S. ; Chu, Rongming ; Hughes, Brian
Author_Institution
HRL Labs., Malibu, CA, USA
fYear
2012
fDate
29-31 May 2012
Firstpage
1
Lastpage
4
Abstract
Gallium Nitride power devices are poised to replace silicon-based MOSFETs and IGBTs in automotive power switching applications. With its projected 100× performance advantage over silicon, GaN is a game changing technology for power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the remaining challenges facing the technology.
Keywords
III-V semiconductors; automotive electronics; gallium compounds; power electronics; power semiconductor switches; wide band gap semiconductors; GaN; IGBT; automotive electronics; automotive power switching applications; gallium nitride power devices; power circuits; power electronics; silicon-based MOSFET; Automotive engineering; Gallium nitride; Insulated gate bipolar transistors; Logic gates; Silicon; Switches; Vehicles; GaN; GaN-on-Si; Gallium Nitride; HFET; automotive applications; hetero-structure field-effect-transistor; power switch;
fLanguage
English
Publisher
ieee
Conference_Titel
Energytech, 2012 IEEE
Conference_Location
Cleveland, OH
Print_ISBN
978-1-4673-1836-5
Electronic_ISBN
978-1-4673-1834-1
Type
conf
DOI
10.1109/EnergyTech.2012.6304646
Filename
6304646
Link To Document