Title :
Silicon carbide power device status and issue
Author_Institution :
Power Electron Branch, Naval Res. Lab., Washington, DC, USA
Abstract :
In this paper, the status and issues of primary silicon carbide devices types are reviewed. The device types reviewed include SiC MOSFET, JFET, bipolar, IGBT, thyristor and JBS diodes. In addition, the key issues relating SiC material to device reliability and performance are identified.
Keywords :
insulated gate bipolar transistors; junction gate field effect transistors; power MOSFET; power bipolar transistors; power semiconductor switches; silicon compounds; thyristors; IGBT diode; JFET; MOSFET; SiC; bipolar diode; device reliability; silicon carbide power device issue; silicon carbide power device status; thyristor diode; Engines; Epitaxial growth; Insulated gate bipolar transistors; Semiconductor device reliability; Silicon carbide; Switches; Bipolar transistor; JFETs; Schottky diode; insulated gate bipolar transistors; power MOSFETs; power semiconductor devices; power transistor; semiconductor epitaxial layers; silicon carbide; thyristor;
Conference_Titel :
Energytech, 2012 IEEE
Conference_Location :
Cleveland, OH
Print_ISBN :
978-1-4673-1836-5
Electronic_ISBN :
978-1-4673-1834-1
DOI :
10.1109/EnergyTech.2012.6304688
