• DocumentCode
    571186
  • Title

    Silicon carbide power device status and issue

  • Author

    Kub, Fritz J.

  • Author_Institution
    Power Electron Branch, Naval Res. Lab., Washington, DC, USA
  • fYear
    2012
  • fDate
    29-31 May 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper, the status and issues of primary silicon carbide devices types are reviewed. The device types reviewed include SiC MOSFET, JFET, bipolar, IGBT, thyristor and JBS diodes. In addition, the key issues relating SiC material to device reliability and performance are identified.
  • Keywords
    insulated gate bipolar transistors; junction gate field effect transistors; power MOSFET; power bipolar transistors; power semiconductor switches; silicon compounds; thyristors; IGBT diode; JFET; MOSFET; SiC; bipolar diode; device reliability; silicon carbide power device issue; silicon carbide power device status; thyristor diode; Engines; Epitaxial growth; Insulated gate bipolar transistors; Semiconductor device reliability; Silicon carbide; Switches; Bipolar transistor; JFETs; Schottky diode; insulated gate bipolar transistors; power MOSFETs; power semiconductor devices; power transistor; semiconductor epitaxial layers; silicon carbide; thyristor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energytech, 2012 IEEE
  • Conference_Location
    Cleveland, OH
  • Print_ISBN
    978-1-4673-1836-5
  • Electronic_ISBN
    978-1-4673-1834-1
  • Type

    conf

  • DOI
    10.1109/EnergyTech.2012.6304688
  • Filename
    6304688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=571186