Title :
A simple solution for low-driving-current output buffer failed at the low voltage ESD zapping event
Author :
Lee, Jian-Hsing ; Shih, J.R. ; Yang, Dao-Hong ; Kuan, Hing-Poh
Author_Institution :
ESD, Richtech Technol. Corp., Taiwan
Abstract :
With the channel current, the driver acts as the trigger device for I/O during ESD zapping event. The driver location in I/O transistor plays a key role in I/O ESD protection. The I/O will fail at low-voltage ESD zapping event if its driver is located at transistor edge, while it can pass the high-voltage ESD zapping if its driver is located at transistor center.
Keywords :
CMOS integrated circuits; electrostatic discharge; I/O ESD protection; I/O transistor; channel current; driver location; low voltage ESD zapping event; low-driving-current output buffer; low-voltage ESD zapping event; transistor center; transistor edge; trigger device; Bipolar transistors; Electrostatic discharges; Logic gates; Reliability; Stress; Substrates; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306259
