Investigation of electrochemical migration on fine pitch BGA package

Author

Chen, Yi Heng ; Hsiao, Meiying

Author_Institution

Quality Div., Powerchip Technol. Corp., Hsinchu, Taiwan

fYear

2012

fDate

2-6 July 2012

Firstpage

1

Lastpage

4

Abstract

Electrochemical migration (ECM) is proved from electrochemical phenomenon involving the transport of metal ions under voltage and an electrolyte. We studied metal migration phenomenon, generation mechanism and root cause on fine pitch BGA package product. Electrical detection failures caused by excessive leakage current phenomenon after HAST stress. The leakage current result caused by electrochemical migration between two solder bumps that are with respect to surface of package substrate from ionic contamination. We considered that moisture combined with particular ion impurities causing electrochemical migration phenomenon during HAST stress. Both failure analyses and repeatability experiment results of HAST are reported.

Keywords

ball grid arrays; electrolytes; electromigration; leakage currents; solders; ECM; HAST stress; electrical detection failure; electrochemical migration; electrolyte; failure analysis; fine pitch BGA package; generation mechanism; ion impurities; ionic contamination; leakage current; metal ions transport; metal migration phenomenon; package substrate; solder bumps; Chemicals; Contamination; Ions; Leakage current; Metals; Soldering; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4673-0980-6

Type

conf

DOI

10.1109/IPFA.2012.6306272

Filename

6306272