Title :
Power MOSFET breakdown voltage study for process control by SIMS
Author :
Ong, K.K. ; Zhu, L. ; Huang, Y.H. ; Hua, Y.N. ; Oh, S.C. ; Liu, Z.Y.
Author_Institution :
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
Abstract :
A failure analysis case study on power MOSFET breakdown voltage is present in this paper. The failure mechanism was found to be related to the N- dopant concentration at the PN junction between the body and the epitaxial layer, which can be characterized by the secondary ions mass spectrometry (SIMS).
Keywords :
electric breakdown; failure analysis; p-n junctions; power MOSFET; process control; secondary ion mass spectroscopy; N-dopant concentration; PN junction; SIMS; epitaxial layer; failure analysis; power MOSFET breakdown voltage; process control; secondary ions mass spectrometry; Epitaxial growth; Epitaxial layers; Junctions; Power MOSFET; Process control; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306284
