TEM dark-field off-axis electron holography strain measurement on embedded-SiGe pMOSFETs and comparison with nano-beam diffraction strain measurement

Author

Zhu, J. ; Zhou, Y.K. ; Toh, S.L. ; Mai, Z.H. ; Lam, J. ; Du, A.Y. ; Hua, Y.N. ; Rajgopal, R.

Author_Institution

QRA, GLOBALFOUNDRIES Singapore, Singapore, Singapore

fYear

2012

fDate

2-6 July 2012

Firstpage

1

Lastpage

5

Abstract

TEM dark-field off-axis electron holography technique was applied to study strain profile in bulk Si pMOSFETs with epitaxial SiGe selectively grown in source/drain are. Based on lattice displacement-induced electron wave phase shift, 2-D strain mapping (ε_[110] and ε_[001]) were retrieved. Strain variation due to sample thinning was evaluated. Results from dark-field holography technique was discussed and compared with TEM nano-beam diffraction strain measurement.

Keywords

MOSFET; epitaxial growth; holography; strain measurement; 2D strain mapping; MOSFET; SiGe; TEM dark field off axis electron holography strain measurement; TEM nanobeam diffraction strain measurement; epitaxial growth; lattice displacement induced electron wave phase shift; strain profile; strain variation; Diffraction; Holography; Image reconstruction; MOSFETs; Silicon; Strain; Strain measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4673-0980-6

Type

conf

DOI

10.1109/IPFA.2012.6306290

Filename

6306290