Title :
Failure analysis on ultra-low k film de-lamination by TOF-SIMS composition analysis
Author :
Teo, Han Wei ; Chen, Shuting ; Zhu, Lei ; Hua, Younan ; Yuan, Zhao Xin ; Heng, Yong Seng ; Li, Chao Yong
Author_Institution :
Globalfoundries Singapore Pte. Ltd., Singapore, Singapore
Abstract :
A failure case study and root cause of ultra low-k film delamination was reported. TOF-SIMS composition analysis found higher concentration of carbon at the transition oxide. The clogging of the foreline flow path was identified in the process to cause the transient carbon surge, resulting in higher carbon concentration in the transition oxide and poor adhesion of the ultra low-k film.
Keywords :
chemical mechanical polishing; delamination; failure analysis; integrated circuit reliability; low-k dielectric thin films; TOF-SIMS composition analysis; carbon concentration; clogging; failure analysis; foreline flow path; poor adhesion; transient carbon surge; transition oxide; ultra low-k film; ultra-low k film delamination; Adhesives; Carbon; Delamination; Films; Reliability; Silicon; Valves;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306292
