Title :
Fault localization using IR lock-in thermography for flashover between the gate rail and the source metal clip
Author_Institution :
Infineon Technol. Malaysia Sdn. Bhd., Batu Berendam, Malaysia
Abstract :
This paper presents fault localization on MOSFET´s gate-source continuity short failures using IR Lock-in Thermography which successfully detected a hot spot under the source metal clip without package decapsulation. Micro-sectioning analysis performed on the hot spot location revealed flashover between the source metal clip and the gate rail.
Keywords :
MOSFET; fault diagnosis; flashover; infrared imaging; semiconductor device reliability; IR lock-in thermography; MOSFET; fault localization; flashover; gate rail; gate-source continuity short failure; hot spot location; microsectioning analysis; source metal clip; Aluminum; Failure analysis; Fingers; Flashover; Logic gates; Rails;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306294
