Title :
A novel internal field enhanced retention degradation model for localized charge trapping memory device
Author :
Yu, Xiao ; Pan, Liyang ; Qiao, Fengying ; Shi, Guangjian ; Xu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A novel internal electric field enhanced retention model for localized charge trapping memory devices is proposed to explain the reliability degradation. According to the model, the excitation energy level distribution profiles of trapped holes after different P/E cycling stress are demonstrated for the first time.
Keywords :
electric fields; hole traps; reliability; semiconductor storage; P/E cycling stress; excitation energy level distribution; internal electric field enhanced retention degradation; localized charge trapping memory device; reliability degradation; trapped hole; Degradation; Electric fields; Electron traps; Energy states; Mathematical model; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306295
