Title :
Correlation of very fast transmission line pulse (VFTLP) and Field-Induced Charged Device Model (CDM) Testing
Author_Institution :
Singapore Inst. of Manuf. Technol., Singapore, Singapore
Abstract :
The correlation between the second break down current of VFTLP Testing and the passing voltage of Field-Induced CDM Testing has been derived. The derivation is based on the power to failure relation and RLC model of CDM test. The derived correlation has been also demonstrated in experiment.
Keywords :
semiconductor device breakdown; semiconductor device models; semiconductor device reliability; semiconductor device testing; RLC model; VFTLP testing; field-induced CDM testing; field-induced charged device model; passing voltage; power-to-failure relation; second breakdown current; very fast transmission line pulse; Calibration; Capacitors; Correlation; Electrostatic discharges; Hidden Markov models; Light emitting diodes; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306309
