Title :
Failure analysis on the standby current due to dislocation in STI structure of flash memory
Author :
Kim, Sang In ; Yang, Hyung Mo ; Yang, Hee Seong ; Ahn, Ju Hyeon ; Kim, Seok Sik ; Shin, Yu Gyun ; Hwang, Ki Hyun ; Rim, Ji Woon ; Lee, Woon Kyung ; Kim, Han Soo ; Whang, Sun Kyu ; Sue, Ji Woong ; Cho, Han Ku
Author_Institution :
R&D Fab Oper. Team, Samsung Electron. Co., Ltd., Hwaseong, South Korea
Abstract :
The technology of increasing Internal Vcc without using memory tester is used to enhance the photon emission and the failure range is defined in detail by nano probing. With these methods, we found out that the leakage current was caused by dislocations of STI arranged in a row.
Keywords :
flash memories; isolation technology; leakage currents; STI structure; failure analysis; failure range; flash memory; leakage current; nanoprobing; photon emission; shallow trench isolation; standby current; Annealing; Leakage current; Logic gates; Materials; Photonics; Stress; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306313
