Title :
Application of Seebeck Effect Imaging on failure analysis of via defect
Author :
Nordin, Nuzrul Fahmi
Author_Institution :
Infineon Technol. (Kulim) Sdn. Bhd., Kulim, Malaysia
Abstract :
Often localizations for defective interconnects are done during or after some destructive analysis or sample preparation i.e., TIVA, PVC or active probing. As a result, the defect observed could be secondary effect induced during analysis. Therefore, Seebeck Effect Imaging (SEI) technique has been developed to avoid such uncertainty. This technique applies the theory of Seebeck effect and adapted into a Scanning Optical Microscope (SOM) system.
Keywords :
Seebeck effect; failure analysis; integrated circuit interconnections; integrated circuit testing; SOM system; defective interconnect localization; destructive analysis; failure analysis; sample preparation; scanning optical microscope system; seebeck effect imaging; via defect; Integrated circuit interconnections; Microscopy; Surface emitting lasers; Temperature sensors; Thermoelectricity;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306316
