Title :
Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test
Author :
Liang Lou ; Hongkang Yan ; Cairan He ; Woo-Tae Park ; Dim-Lee Kwong ; Chengkuo Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6×105 cycles, there is no observed drift and degradation in sensor characteristics.
Keywords :
compressive strength; diaphragms; dynamic testing; elemental semiconductors; multilayers; nanowires; piezoresistive devices; pressure sensors; silicon; SiNW; compressive strain; piezoresistive silicon nanowires; probe-based dynamic cycling test; sensor characteristics; silicon nanowires-based piezoresistive pressure sensor; suspended multilayered diaphragm; Fatigue; Piezoresistance; Silicon; Strain; Stress; Testing; Fatigue; large compressive strain; piezoresistive; pressure sensor; silicon nanowire;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306318
