• DocumentCode
    571884
  • Title

    Comparison of failure mechanisms of ESD GGNFET subjected to VFTLP robustness and reliability tests

  • Author

    Lai, Weng Hong ; Koh, C.K. ; Khoo, B.S. ; Chen, Y. ; Chow, S.Y.

  • Author_Institution
    Singapore Inst. of Manuf. Technol. (SIMTech), Singapore, Singapore
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    An ESD GGNFET was swept with increasing voltage to failure using VFTLP. Another sample was stressed to 65% of the Vt2 obtained in the first test. The second sample failed after a large enough number of sweeps. The difference in the failure mechanisms for these two samples is reported for the first time.
  • Keywords
    electrostatic discharge; failure analysis; reliability; ESD GGNFET; VFTLP robustness; failure mechanism; reliability test; Electrostatic discharges; Failure analysis; Logic gates; Robustness; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4673-0980-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2012.6306320
  • Filename
    6306320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=571884