Title :
Comparison of failure mechanisms of ESD GGNFET subjected to VFTLP robustness and reliability tests
Author :
Lai, Weng Hong ; Koh, C.K. ; Khoo, B.S. ; Chen, Y. ; Chow, S.Y.
Author_Institution :
Singapore Inst. of Manuf. Technol. (SIMTech), Singapore, Singapore
Abstract :
An ESD GGNFET was swept with increasing voltage to failure using VFTLP. Another sample was stressed to 65% of the Vt2 obtained in the first test. The second sample failed after a large enough number of sweeps. The difference in the failure mechanisms for these two samples is reported for the first time.
Keywords :
electrostatic discharge; failure analysis; reliability; ESD GGNFET; VFTLP robustness; failure mechanism; reliability test; Electrostatic discharges; Failure analysis; Logic gates; Robustness; Silicon; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306320
