DocumentCode :
571886
Title :
Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS
Author :
Wang, B. ; Tanaka, S. ; Guo, B. ; Vereecke, G. ; Severi, S. ; Witvrouw, A. ; Wevers, M. ; De Wolf, I.
Author_Institution :
Imec, Leuven, Belgium
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
1
Lastpage :
1
Abstract :
MEMs typically have moving parts that are sensitive to the environmental pressure during operation. Many types of microsystem devices need vacuum in order to operate properly. However, making a high vacuum MEMS package, which maintains this vacuum over a long time, is difficult. Sources of gas inside a MEMS package are mainly due to external leakage or in-diffusion and/or internal materials outgassing. This paper reports on a systematical study of the outgassing properties of typical materials (Table 1) used for imec´s polycrystalline silicon-germanium (poly-SiGe) based MEMS thin film vacuum package technology.
Keywords :
Ge-Si alloys; micromechanical devices; outgassing; semiconductor device packaging; thin films; environmental pressure; external leakage; germanium; high vacuum MEMS package; microsystem device; outgassing study; poly-SiGe; polycrystalline silicon; thin film vacuum package technology; vacuum packaging; Annealing; Cleaning; Films; Micromechanical devices; Packaging; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4673-0980-6
Type :
conf
DOI :
10.1109/IPFA.2012.6306325
Filename :
6306325
Link To Document :
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