Highly Linear Silicon-on-Insulator CMOS Digitally Programmable Capacitor Array for Tunable Antenna Matching Circuits

Author

Donggu Im ; Kwyro Lee

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

23

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

665

Lastpage

667

Abstract

A stacked-FET linear 4-bit silicon-on-insulator (SOI) CMOS switched capacitor array is designed for use in tunable antenna matching circuits. A New biasing strategy without negative bias voltage is proposed to circumvent drawbacks such as digital switching noise and harmonics feed-through to the antenna. The proposed switched capacitor array shows almost identical power handling capability to that of the conventional version with negative bias voltage. Compared to other works in SOI or silicon-on-sapphire (SOS) technologies, it shows a comparable or better quality factor, tuning range, power handling capability, and harmonic distortion while consuming ultra low power.

Keywords

CMOS integrated circuits; Q-factor; circuit tuning; programmable circuits; silicon-on-insulator; switched capacitor networks; SOI CMOS; SOS technology; digital switching noise; digitally programmable capacitor array; harmonic distortion; harmonics feed-through; negative bias voltage; new biasing strategy; power handling capability; quality factor; silicon-on-insulator CMOS; silicon-on-sapphire technology; storage capacity 4 bit; switched capacitor array; tunable antenna matching circuit; CMOS integrated circuits; Capacitors; Logic gates; MOSFET; Silicon-on-insulator; Switching circuits; $Q$-factor; Power handling capability; SOI CMOS; switched capacitor array; tunable matching circuit; tuning range;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2284776

Filename

6636077