High power pulse electron beam modification and ion implantation of Hg1−xCdxTe crystals

Hg1−xCdxTe (MCT) samples (x= 0.21 − 0.22) are irradiated by pulse electron beams under the doze 10¹³–10¹⁷ cm⁻². Electron beams have the next parameters: 500 keV energy electron (30–40 A/cm² electron current density, 60–80ns current pulse); 200 keV energy electron (8–10 Alcm² electron current density, 100–200 ns current pulse). Electroconductivity and recombination of modified samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial p-type crystals due to the conductivity compensation. MCT samples (x= 0.21 – 0.22) are implanted by Al ions under the dose 10¹²−10¹⁶ cm⁻². Ion beams have the next parameters: (1–10) A/cm² ion current density; (100–200) ns current pulse; (150–450) keV Al ion (Al⁺,Al⁺⁺,Al⁺⁺⁺). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate difference in ion distribution, doping profiles and defect formation radiation mechanisms.