DocumentCode :
572757
Title :
High-power semiconductor RSD-based switch
Author :
Bezuglov, V.G. ; Galakhov, I.V. ; Grusin, I.A. ; Zolotovsky, V.I. ; Gudov, S.N. ; Logutenko, S.L. ; Murugov, V.M. ; Osin, V.A. ; Petrakov, V.N. ; Grekhov, I.V. ; Korotkov, Sergey V. ; Kovtun, V.I. ; Martynenko, V.A. ; Chumakov, G.D.
Author_Institution :
RFNC - VNIIEF, Sarov (Arzamas - 16), Russia
Volume :
2
fYear :
1996
fDate :
10-14 June 1996
Firstpage :
981
Lastpage :
984
Abstract :
We describe the operating principle and test results for the high-power semiconductor RSD-based switch with the following operating parameters: • operating voltage − 25kV, • peak operating current − 200kA, • maximum transferred charge − 70C. The switch is intended for use by high-power capacitor banks in state-of-the-art research facilities. The switch is evaluated for its applicability in commercial pulsed systems. The possibility to increase the peak operating current to 500kA is shown.
fLanguage :
English
Publisher :
iet
Conference_Titel :
High-Power Particle Beams, 1996 11th International Conference on
Conference_Location :
Prague, Czech Republic
Print_ISBN :
978-80-902250-3-9
Type :
conf
Filename :
6308503
Link To Document :
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