Title :
Electron sheath collapse in an applied-B ion diode
Author_Institution :
Forschungszentrum Karlsruhe, Institut für Neutronenphysik und Reaktortechnik, Postfach 3640, 76021, Germany
Abstract :
The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer is found. It is more damaging at higher diode voltages and it may be responsible for the parasitic load effect observed in the experiments.
Conference_Titel :
High-Power Particle Beams, 1996 11th International Conference on
Conference_Location :
Prague, Czech Republic
Print_ISBN :
978-80-902250-3-9
