• DocumentCode
    572795
  • Title

    Electron sheath collapse in an applied-B ion diode

  • Author

    Grechikha, A.

  • Author_Institution
    Forschungszentrum Karlsruhe, Institut für Neutronenphysik und Reaktortechnik, Postfach 3640, 76021, Germany
  • Volume
    2
  • fYear
    1996
  • fDate
    10-14 June 1996
  • Firstpage
    1139
  • Lastpage
    1142
  • Abstract
    The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer is found. It is more damaging at higher diode voltages and it may be responsible for the parasitic load effect observed in the experiments.
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    High-Power Particle Beams, 1996 11th International Conference on
  • Conference_Location
    Prague, Czech Republic
  • Print_ISBN
    978-80-902250-3-9
  • Type

    conf

  • Filename
    6308542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=572795