40–70 GHz 13 Gbps 1-dB loss SPST and SPDT differential switches in 0.35 μm SiGe technology

Author

Thian, Mury ; Fusco, Vincent

Author_Institution

ECIT Inst., Queen´s Univ. of Belfast, Belfast, UK

fYear

2011

fDate

12-12 Sept. 2011

Firstpage

11

Lastpage

15

Abstract

This paper presents the design and characterization of ultrafast wideband low-loss single-pole single-throw (SPST) and single-pole double-throw (SPDT) differential switches. The SPDT switch exhibits insertion loss of lower than 1.25 dB from 42 to 70 GHz and isolation of better than 20 dB from 40 to 65 GHz. Similar low-loss and broadband characteristics are also observed from the measured SPST switch. The proposed switch topologies adopting current-steering technique and implemented in 0.35 μm SiGe bipolar technology result in a switching time of only 75 ps. This suggests a maximum switching speed of 13 Gbps, the fastest ever reported at V-band.

Keywords

Ge-Si alloys; microwave switches; semiconductor materials; SPDT differential switches; SPST differential switches; SiGe; V-band; bipolar technology; bit rate 13 Gbit/s; broadband characteristics; current-steering technique; frequency 40 GHz to 70 GHz; loss 1 dB; single-pole double-throw differential switches; size 0.35 mum; switch topology; ultrafast wideband low-loss single-pole single-throw differential switches; Absorptive; SPDT; SPST; SiGe; V-band; current steering; heterojunction bipolar transistor (HBT); insertion loss; isolation; mm-wave; rise time; switch; transistor circuits;

fLanguage

English

Publisher

iet

Conference_Titel

Active RF Devices, Circuits and Systems Seminar

Conference_Location

Belfast

Electronic_ISBN

978-1-84919-540-9

Type

conf

DOI

10.1049/ic.2011.0208

Filename

6309320