Broadband Gm-boosted differential HBT doublers with transformer balun

Author

Jian Zhang ; Zirath, Herbert

Author_Institution

ECIT, Queens Univ. of Belfast, Belfast, UK

fYear

2011

fDate

12-12 Sept. 2011

Firstpage

29

Lastpage

32

Abstract

Broadband monolithic InGaP HBT frequency doublers for K-Band application have been developed. The designs employ a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3dB bandwidth, extending from 6-18 GHz. The transformer-coupled design has about 15dB fundamental rejection over a slightly narrower bandwidth extending from 7-16 GHz. Both doublers have conversion gain peaking at more than -0.8dB and output power more than 13 dBm.

Keywords

III-V semiconductors; baluns; capacitors; frequency multipliers; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave frequency convertors; transformers; Gm-boosted differential common-base configuration; InGaP; K-band; broadband Gm-boosted differential HBT doublers; broadband monolithic HBT frequency doublers; capacitive based coupling; cross-coupled capacitors; frequency 6 GHz to 18 GHz; transformer balun; transformer-coupled design; Capacitor-crossed coupling; Frequency Doubler; InGaP HBT; Transformer balun;

fLanguage

English

Publisher

iet

Conference_Titel

Active RF Devices, Circuits and Systems Seminar

Conference_Location

Belfast

Electronic_ISBN

978-1-84919-540-9

Type

conf

DOI

10.1049/ic.2011.0210

Filename

6309322