Title :
Design a V-band 4×4 Butler matrix for switched beam-forming operation
Author :
Jian Zhang ; Vincent, François
Author_Institution :
ECIT, Queens Univ. of Belfast, Belfast, UK
Abstract :
A compact V-band 4×4 Butler matrix, using 0.35 μm SiGe bipolar process, is proposed in this work. This design exhibits an average insertion loss of 3 dB with amplitude variation less than 1.5 dB and an average phase imbalance of less than 10 degrees from 55 GHz to 65 GHz. The chip area is only 0.5×0.9 mm2 including all pads. The SiGe Butler matrix is an excellent candidate for MIMO systems and applied in high data-rate communications.
Keywords :
Ge-Si alloys; millimetre wave circuits; switched networks; SiGe; SiGe bipolar process; chip area; compact V-band Butler matrix; frequency 55 GHz to 65 GHz; phase imbalance; size 0.35 mum; switched beam-forming operation; Butler matrix; SiGe; beam-forming;
Conference_Titel :
Active RF Devices, Circuits and Systems Seminar
Conference_Location :
Belfast
Electronic_ISBN :
978-1-84919-540-9
DOI :
10.1049/ic.2011.0217
