Title :
Silicon monoxide influence on silicon nanocrystal formation
Author :
Mikhantiev, Eugene A. ; Usenkov, Stanislav V. ; Shwartz, Natalia L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
Study of silicon nanocrystal (Si-nc) formation in SiOx layers during high temperature annealing was fulfilled by Monte Carlo simulation. Role of silicon monoxide in the process of cluster nucleation and growth was analyzed. Dependencies of Si-nc size, number of clusters on temperature and annealing time for open and closed systems were obtained. Simulation demonstrated that presence of silicon monoxide increased critical nucleus size and could accelerate Si-nc aggregation rate.
Keywords :
Monte Carlo methods; aggregation; annealing; elemental semiconductors; high-temperature effects; nanofabrication; nanostructured materials; nucleation; semiconductor growth; silicon; Monte Carlo simulation; Si; SiOx; aggregation rate; cluster nucleation; critical nucleus size; high temperature annealing; silicon monoxide; silicon nanocrystal; Acceleration; Annealing; Atomic layer deposition; Nanoscale devices; Silicon; Simulated annealing; Substrates; Monte Carlo; SiOx; nanoclusters; simulation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-4673-2517-2
DOI :
10.1109/EDM.2012.6310259
