High performance InAlN/GaN heterostructure and field effect transistor on sapphire substrate by MOCVD

Author

Fang, Y.L. ; Dun, S.B. ; Liu, B. ; Yin, J.Y. ; Sheng, B.C. ; Han, T.T. ; He, Z.Z. ; Xing, D. ; Cai, S.J. ; Feng, Z.H.

Author_Institution

Sci. & Technol. on ASIC Lab., Hebei Semicond. Res. Inst., Shijiazhuang, China

fYear

2012

fDate

27-30 May 2012

Firstpage

650

Lastpage

653

Abstract

High-performance InAlN/GaN heterostructure by metal-organic chemical vapor deposition and field effect transistor with a nominal gate length of 0.2 μm on sapphire substrate were obtained. Low defects density and a high electron mobility of 1930 cm²/V·s were obtained for the heterostructure. The fabricated device exhibited remarkable RF characteristics, i.e. a cutoff frequency of 69GHz with the gate length of 0.2μm, suggesting the extraordinary performances reachable by InAlN based technology.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; electron mobility; field effect transistors; gallium compounds; indium compounds; sapphire; semiconductor heterojunctions; wide band gap semiconductors; InAlN-GaN; MOCVD; electron mobility; field effect transistor; frequency 69 GHz; high-performance InAlN-GaN heterostructure; metal-organic chemical vapor deposition; sapphire substrate; size 0.2 micron; Gallium nitride; HEMTs; Logic gates; MOCVD; MODFETs; Performance evaluation; Substrates; HFET; InAlN/GaN heterostructure; MOCVD; mobility; sapphire substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves (GSMM), 2012 5th Global Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4673-1302-5

Type

conf

DOI

10.1109/GSMM.2012.6313977

Filename

6313977