Title :
GaAs device Ohmic contact degradation assessment and analysis
Author :
Hong, Xiao ; Huang, Yun
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., 5th Electron. Res. Inst. of the Minist. of Ind. & Inf. Technol., Guangzhou, China
Abstract :
GaAs PHEMT are used abroad in high temperature and high power RF/Microwave field; it is the most promising microwave devices. In long-term use, the PHEMT device may cause parameter drift and output power decrease. In this paper, based on the analysis of device structure and degradation mechanism, we design structure doing high-temperature accelerated lift testing, and analyze using SIMS, FIB, EM and other equipment, finally evaluating Ohmic contact of GaAs devices.
Keywords :
gallium arsenide; high electron mobility transistors; microwave devices; ohmic contacts; semiconductor device testing; FIB; GaAs; PHEMT device; SIMS; degradation mechanism; device structure; high power RF/microwave field; high temperature RF/microwave field; high-temperature accelerated lift testing; microwave devices; ohmic contact degradation assessment; parameter drift; Degradation; Gallium arsenide; Metals; Ohmic contacts; PHEMTs; Reliability; Stress; GaAs PHEMT device; Ohmic contact; lift testing;
Conference_Titel :
Millimeter Waves (GSMM), 2012 5th Global Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4673-1302-5
DOI :
10.1109/GSMM.2012.6314064
