Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs1−xNx thin films

Author

Jia, Baoshan ; Zhou, Lu ; Wang, Yuhua ; Bai, Duanyuan ; Qiao, Zhongliang ; Gao, Xin ; Bo, Baoxue

Author_Institution

State Key Lab. of High-Power Semicond. Laser, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

13

Lastpage

15

Abstract

This work reported the changes in the carrier concentration of a-GaAs_1-xN_x thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased.

Keywords

III-V semiconductors; amorphous semiconductors; carrier density; gallium arsenide; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; GaAs_1-xN_x; N incorporation; free carrier concentration; reactive magnetron sputtering; sputtering pressure; sputtering-deposited thin films; Gallium arsenide; Integrated optics; Optical films; Optical filters; Sputtering; Substrates; a-GaAsN thin films; carrier concentration Introduction; sputtering deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316204

Filename

6316204