• DocumentCode
    574916
  • Title

    Progress on the GaN-based LEDs and LDs

  • Author

    Wang, Yong ; Zou, Yonggang ; Ma, Xiaohui ; Yu, Naisen ; Deng, Dongmei ; Lau, Kei May

  • Author_Institution
    Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
  • fYear
    2012
  • fDate
    23-25 Aug. 2012
  • Firstpage
    105
  • Lastpage
    110
  • Abstract
    The GaN-based light emitting diodes (LEDs) and laser diodes (LDs) have extensive applications in LED display, high brightness illumination, traffic signals, streetlights, automotive for LEDs, and high density optical storage, full-color display, laser printing, and laser lighting for LDs. The progress of the GaN-based LEDs and LDs is introduced. There are many universities and companies focusing on their research on the GaN LEDs and LDs, and the great breakthroughs have been achieved in the GaN material, process techniques, growth on non-polar and semi-polar substrates, and high extraction efficiency for LEDs. But there are still some challenges for the commercial applications such as selection of the appropriate substrates, quantum confined Stark effect (QCSE), and catastrophic optical damage (COD) for LDs. And the possible solutions are proposed in order to eliminate or decrease the difficulties.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; quantum confined Stark effect; quantum well lasers; wide band gap semiconductors; COD; GaN; GaN LD; GaN LED; QCSE; catastrophic optical damage; extraction efficiency; laser diodes; light emitting diodes; material growth; nonpolar substrates; process techniques; quantum confined Stark effect; semipolar substrates; Epitaxial growth; Gallium nitride; Light emitting diodes; Lighting; Power generation; Substrates; GaN; LD; LED;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
  • Conference_Location
    Changchun, Jilin
  • Print_ISBN
    978-1-4673-2638-4
  • Type

    conf

  • DOI
    10.1109/ICoOM.2012.6316228
  • Filename
    6316228