Intrinsic Tolerance to Total Ionizing Dose Radiation in Gate-All-Around MOSFETs

Author

Comfort, Everett S. ; Rodgers, Martin P. ; Allen, William ; Gausepohl, Steve C. ; Zhang, E.X. ; Alles, Michael L. ; Hughes, Harold L. ; McMarr, Patrick J. ; Ji Ung Lee

Author_Institution

Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4483

Lastpage

4487

Abstract

We measured the total ionizing dose response of gate-all-around silicon nanowire n- and pMOSFETs to x-ray doses up to 2Mrad(SiO₂). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slope, even at the highest dose for a wide range of bias conditions. We attribute this to the intrinsically rad-hard feature of the gate-all-around device design, where the channel is no longer in contact with any insulating layers that could form a parasitic channel.

Keywords

MOSFET; X-ray effects; radiation hardening (electronics); silicon compounds; SiO₂; X-ray doses; bias conditions; gate-all-around device design; gate-all-around pMOSFET; gate-all-around silicon nanowire nMOSFET; insulating layers; intrinsic tolerance; off-state current; parasitic channel; radiation hardening; subthreshold slope; threshold voltage; total ionizing dose radiation; Insulators; Logic gates; MOSFET; MOSFET circuits; Radiation effects; Threshold voltage; Gate-all-around; radiation effects; total ionizing dose; x-ray radiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2280247

Filename

6636103