• DocumentCode
    57570
  • Title

    Time and Frequency Domain Characterization of Transistor Self-Heating

  • Author

    Makovejev, S. ; Olsen, Svein Harald ; Kilchytska, V. ; Raskin, Jean-Pierre

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Newcastle Univ., Newcastle upon Tyne, UK
  • Volume
    60
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    1844
  • Lastpage
    1851
  • Abstract
    Pulsed I-V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I-V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.
  • Keywords
    MOSFET; frequency-domain analysis; silicon-on-insulator; time-domain analysis; RF characterization technique; SOI MOSFET; depleted SOI device; frequency domain characterization; silicon on insulator; time domain characterization; transistor self heating; Pulsed $Ihbox{--}V$; RF; self-heating; silicon on insulator (SOI);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2259174
  • Filename
    6515360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=57570