Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology

Author

Pekarik, John J. ; Adkisson, James W. ; Camillo-Castillo, Renata ; Cheng, Peng ; DiVergilio, Adam W. ; Gray, Peter B. ; Jain, Vibhor ; Kaushal, Vikas ; Khater, Marwan H. ; Liu, Qizhi ; Harame, David L.

Author_Institution

Microelectron. Div., IBM, Essex Junction, VT, USA

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

4

Abstract

Having two, or more, transistors with different values of f_T and BV_CEO provides flexibility to circuit designers in making tradeoffs of power and performance. The process complexity and resulting cost of fabricating these transistors on the same wafer is another important factor. Three different approaches for co-integrating high-performance and high-breakdown SiGe npn HBTs with minimal process deviation are presented herein. The work features a high-performance HBT with f_T × BV_CEO product of 500GHz-V and a high-breakdown HBT with over 430GHz-V integrated on the same wafer with one-mask deviation.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; avalanche breakdown; bipolar MIMIC; circuit complexity; heterojunction bipolar transistors; integrated circuit design; submillimetre wave integrated circuits; BiCMOS technology; SiGe; circuit designers; high-breakdown SiGe HBT; high-performance SiGe HBT; minimal process deviation; one-mask deviation; process complexity; Doping; Electric fields; Heterojunction bipolar transistors; Implants; Kirk field collapse effect; Silicon carbide; Avalanche breakdown; Cutoff frequency; Device physics; Heterojunction bipolar transistors; Power devices; Silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352651

Filename

6352651