Title :
Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology
Author :
Pekarik, John J. ; Adkisson, James W. ; Camillo-Castillo, Renata ; Cheng, Peng ; DiVergilio, Adam W. ; Gray, Peter B. ; Jain, Vibhor ; Kaushal, Vikas ; Khater, Marwan H. ; Liu, Qizhi ; Harame, David L.
Author_Institution :
Microelectron. Div., IBM, Essex Junction, VT, USA
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
Having two, or more, transistors with different values of fT and BVCEO provides flexibility to circuit designers in making tradeoffs of power and performance. The process complexity and resulting cost of fabricating these transistors on the same wafer is another important factor. Three different approaches for co-integrating high-performance and high-breakdown SiGe npn HBTs with minimal process deviation are presented herein. The work features a high-performance HBT with fT × BVCEO product of 500GHz-V and a high-breakdown HBT with over 430GHz-V integrated on the same wafer with one-mask deviation.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; avalanche breakdown; bipolar MIMIC; circuit complexity; heterojunction bipolar transistors; integrated circuit design; submillimetre wave integrated circuits; BiCMOS technology; SiGe; circuit designers; high-breakdown SiGe HBT; high-performance SiGe HBT; minimal process deviation; one-mask deviation; process complexity; Doping; Electric fields; Heterojunction bipolar transistors; Implants; Kirk field collapse effect; Silicon carbide; Avalanche breakdown; Cutoff frequency; Device physics; Heterojunction bipolar transistors; Power devices; Silicon bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352651
