DocumentCode
576741
Title
Single Event Upset Characterization of the Virtex-6 Field Programmable Gate Array Using Proton Irradiation
Author
Hiemstra, David M. ; Kirischian, Valeri
Author_Institution
MDA, Brampton, ON, Canada
fYear
2012
fDate
16-20 July 2012
Firstpage
1
Lastpage
4
Abstract
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Virtex-6 FPGA are presented. Upset rates in the space radiation environment are estimated.
Keywords
SRAM chips; field programmable gate arrays; SRAM; Virtex-6 FPGA; Virtex-6 field programmable gate array; functional blocks; logic configuration; proton irradiation; single event upset characterization; space radiation environment; Field programmable gate arrays; Monitoring; Performance evaluation; Protons; Radiation effects; Random access memory; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location
Tucson, AZ
ISSN
2154-0519
Print_ISBN
978-1-4673-2730-5
Type
conf
DOI
10.1109/REDW.2012.6353716
Filename
6353716
Link To Document