DocumentCode :
576743
Title :
Scaling Effects in Highly Scaled Commercial Nonvolatile Flash Memories
Author :
Irom, Farokh ; Nguyen, Duc N. ; Allen, Gregory R. ; Zajac, Stephanie A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol. Pasadena, Pasadena, CA, USA
fYear :
2012
fDate :
16-20 July 2012
Firstpage :
1
Lastpage :
6
Abstract :
SEE measurements and TID response for 25 nm Micron Technology NAND flash memories are reported. Radiation results of MLC 64 Gb parts are compared with results from SLC 32 Gb parts. Also, scaling effects on SEE and TID are discussed.
Keywords :
flash memories; radiation effects; random-access storage; SEE measurements; TID response; highly scaled commercial nonvolatile flash memory; micron technology NAND flash memory; radiation results; scaling effects; size 25 nm; Annealing; Flash memory; Radiation effects; Silicon; Single event upset; Temperature measurement; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
ISSN :
2154-0519
Print_ISBN :
978-1-4673-2730-5
Type :
conf
DOI :
10.1109/REDW.2012.6353720
Filename :
6353720
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=576743
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