Title :
Single Event Effects Sensitivity of DDR3 SDRAMs to Protons and Heavy Ions
Author :
Koga, R. ; George, J. ; Bielat, S.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
SEE sensitivity to protons and heavy ions is observed with several types of DDR3 SDRAMs. Upsets in control sections with various error output patterns have been measured along with upsets in memory storage elements.
Keywords :
DRAM chips; DDR3 SDRAM; SEE sensitivity; error output patterns; heavy ions; memory storage elements; protons; Ions; Organizations; Protons; Registers; SDRAM; Sensitivity; Software;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-2730-5
DOI :
10.1109/REDW.2012.6353721
