• DocumentCode
    576744
  • Title

    Single Event Effects Sensitivity of DDR3 SDRAMs to Protons and Heavy Ions

  • Author

    Koga, R. ; George, J. ; Bielat, S.

  • Author_Institution
    Aerosp. Corp., El Segundo, CA, USA
  • fYear
    2012
  • fDate
    16-20 July 2012
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    SEE sensitivity to protons and heavy ions is observed with several types of DDR3 SDRAMs. Upsets in control sections with various error output patterns have been measured along with upsets in memory storage elements.
  • Keywords
    DRAM chips; DDR3 SDRAM; SEE sensitivity; error output patterns; heavy ions; memory storage elements; protons; Ions; Organizations; Protons; Registers; SDRAM; Sensitivity; Software;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2012 IEEE
  • Conference_Location
    Tucson, AZ
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4673-2730-5
  • Type

    conf

  • DOI
    10.1109/REDW.2012.6353721
  • Filename
    6353721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=576744