Title :
Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors
Author :
Chen, Dakai ; Topper, Alyson ; Forney, James ; Triggs, Brian ; Kazmakites, Tony ; Pease, Ronald ; Ladbury, Raymond ; LaBel, Kenneth
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of ×3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively.
Keywords :
bipolar transistors; radiation hardening (electronics); sensitivity analysis; 2N2222 devices; 2N2907 devices; critical degradation levels; discrete bipolar junction transistors; enhanced low dose rate sensitivity evaluation; irradiation bias configuration; low dose rate enhancement factor; quality assurance level; Bipolar transistors; Degradation; Integrated circuits; Pins; Sensitivity; Standards; Transistors;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-2730-5
DOI :
10.1109/REDW.2012.6353732
