Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

Author

Chen, Dakai ; Topper, Alyson ; Forney, James ; Triggs, Brian ; Kazmakites, Tony ; Pease, Ronald ; Ladbury, Raymond ; LaBel, Kenneth

Author_Institution

NASA Goddard Space Flight Center, Greenbelt, MD, USA

fYear

2012

fDate

16-20 July 2012

Firstpage

1

Lastpage

7

Abstract

We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of ×3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively.

Keywords

bipolar transistors; radiation hardening (electronics); sensitivity analysis; 2N2222 devices; 2N2907 devices; critical degradation levels; discrete bipolar junction transistors; enhanced low dose rate sensitivity evaluation; irradiation bias configuration; low dose rate enhancement factor; quality assurance level; Bipolar transistors; Degradation; Integrated circuits; Pins; Sensitivity; Standards; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2012 IEEE

Conference_Location

Tucson, AZ

ISSN

2154-0519

Print_ISBN

978-1-4673-2730-5

Type

conf

DOI

10.1109/REDW.2012.6353732

Filename

6353732