DocumentCode :
576749
Title :
Recent Power MOSFET Single Event Testing Results
Author :
Scheick, Leif Z.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
2012
fDate :
16-20 July 2012
Firstpage :
1
Lastpage :
9
Abstract :
The results of recent Single Event Effect (SEE) testing of newly available power MOSFETS are presented.
Keywords :
power MOSFET; radiation hardening (electronics); semiconductor device testing; SEE testing; power MOSFET single event testing; Bars; Logic gates; Power MOSFET; Standards; Testing; Xenon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
ISSN :
2154-0519
Print_ISBN :
978-1-4673-2730-5
Type :
conf
DOI :
10.1109/REDW.2012.6353735
Filename :
6353735
Link To Document :
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