Low-Power CMOS Voltage Regulator Architecture for Implantable RF Circuits

Author

Luo, Lijun ; Gannes, K.D. ; Fricke, Kyle ; Senjuti, Shawon ; Sobot, Robert

Author_Institution

Electr. & Comput. Eng., Univ. of Western Ontario, London, ON, Canada

fYear

2012

fDate

27-28 Sept. 2012

Firstpage

99

Lastpage

106

Abstract

We present design architecture of a low--power voltage regulator that includes a charge--pump and a band gap voltage reference in CMOS 130nm technology. The DC regulator is intended for RF IC energy harvesting applications and optimized for powering implantable electronics. The internal circuit sections work with the local power supply voltage levels in the 1.5V to 1.9V range (worst case), and the 3.96uW band gap generates 462mVDC reference voltage. The complete regulator consumes typically 18uW for its own operation while delivering regulated V(PWR)=1V voltage within 0.14% variation under full load conditions, i.e. I(PWR)(max)=4mA current.

Keywords

CMOS integrated circuits; charge pump circuits; energy harvesting; low-power electronics; radiofrequency integrated circuits; reference circuits; voltage regulators; CMOS technology; DC regulator; RF IC energy harvesting; band gap voltage reference; charge pump circuit; current 4 mA; implantable RF circuits; implantable electronics; low-power CMOS voltage regulator architecture; power 18 muW; power 3.96 muW; size 130 nm; voltage 1 V; voltage 1.5 V to 1.9 V; voltage 462 mV; CMOS integrated circuits; CMOS technology; Coils; Inductors; Regulators; Transistors; Voltage control; Analogue IC; energy harvesting; implantable sensors; telemetry;

fLanguage

English

Publisher

ieee

Conference_Titel

RFID Technology (EURASIP RFID), 2012 Fourth International EURASIP Workshop on

Conference_Location

Torino

Print_ISBN

978-1-4673-2602-5

Type

conf

DOI

10.1109/RFID.2012.23

Filename

6353822